SEMICONDUCTOR LASER LIGHT SOURCE

摘要

In conventional semiconductor laser light sources, since intervals of light emitter waveguides are changed or stresses which are applied on chips of a laser array are controlled in the production process, there exists a problem that the productivity is lowered. A structure of a heat sink 3a, on which a semiconductor laser array 2 is mounted in which a plurality of semiconductor lasers are arrayed at equal intervals in a stripe width direction, is configured so that the heat radiation efficiencies of the plurality of semiconductor lasers are not constant between the central region and other regions in the stripe width direction. Concretely, the heat sink is configured in such a way that an area of a second region in a second surface of the heat sink is smaller than an area of a fourth region in the second surface with which the semiconductor laser radiation portion except for the central side of the plurality of semiconductor lasers in the stripe width direction are in contact, when each of the areas is converted into an area per semiconductor laser.

主权项

1. A semiconductor laser light source comprising:
a semiconductor laser array in which a plurality of semiconductor lasers are provided and stripes of the plurality of semiconductor lasers are arrayed at equal intervals in a stripe width direction; and a heat sink having a first surface on which the semiconductor laser array is mounted, and a second surface opposite to the first surface and in contact with a cooling unit, wherein an area of a second region in the second surface opposite to a first region in the first surface with which a semiconductor laser radiation portion in the central side of the plurality of semiconductor lasers in the stripe width direction is in contact, is smaller than an area of a fourth region in the second surface opposite to a third region in the first surface with which a semiconductor laser radiation portion except for lasers in the central side of the plurality of semiconductor lasers in the stripe width direction is in contact, when each of the areas is converted into an area per semiconductor laser, and wherein, in the heat sink, the area of the fourth region per semiconductor laser is gradually increased from the central side to both end sides in the stripe width direction.