Substrates Including Gallium Nitride Layers and a Method of Producing the Same

摘要

In a substrate having a gallium nitride layer, surface damage after surface treatment of the gallium nitride layer is reduced and quality of a functional device formed thereon is improved. A substrate 4 having at least a gallium nitride layer 4 is provided. A plasma etching system equipped with an inductively coupled plasma generating system is used and a fluorine-based gas is introduced at a standardized direct current bias potential of −10V/cm2 or higher to subject a surface 3a of the gallium nitride layer to dry etching treatment.

主权项

1. A method of producing a substrate comprising a surface gallium nitride layer, said method comprising:
using a plasma etching system comprising a plasma generating system of inductively coupled type; and introducing a fluorine-based gas to perform a dry etching treatment of a surface of said gallium nitride layer.