发明名称 DOUBLE LAYERED TRANSPARENT CONDUCTIVE OXIDE FOR REDUCED SCHOTTKY BARRIER IN PHOTOVOLTAIC DEVICES
摘要 A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
申请公布号 US2016300965(A1) 申请公布日期 2016.10.13
申请号 US201615189925 申请日期 2016.06.22
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION ;Bay Zu Precision Co., LTD. 发明人 CHEN SHUN-MING;HUANG CHIEN-CHIH;DESOUZA JOEL P.;HONG AUGUSTIN J.;KIM JEEHWAN;KU CHIEN-YEH;SADANA DEVENDRA K.;WANG CHUAN-WEN
分类号 H01L31/0224;H01L31/18;H01L31/0392;H01L31/075 主分类号 H01L31/0224
代理机构 代理人
主权项 1. A method for fabricating a photovoltaic device, comprising: forming a double layer transparent conductive oxide on a transparent substrate including: forming a doped electrode layer on the substrate; andforming a buffer layer on the doped electrode layer by reducing dopant concentration to zero, the buffer layer including an undoped or p-doped form of a same material as the doped electrode layer; and forming a light-absorbing semiconductor structure including a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
地址 Armonk NY US