发明名称 |
DOUBLE LAYERED TRANSPARENT CONDUCTIVE OXIDE FOR REDUCED SCHOTTKY BARRIER IN PHOTOVOLTAIC DEVICES |
摘要 |
A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer. |
申请公布号 |
US2016300965(A1) |
申请公布日期 |
2016.10.13 |
申请号 |
US201615189925 |
申请日期 |
2016.06.22 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION ;Bay Zu Precision Co., LTD. |
发明人 |
CHEN SHUN-MING;HUANG CHIEN-CHIH;DESOUZA JOEL P.;HONG AUGUSTIN J.;KIM JEEHWAN;KU CHIEN-YEH;SADANA DEVENDRA K.;WANG CHUAN-WEN |
分类号 |
H01L31/0224;H01L31/18;H01L31/0392;H01L31/075 |
主分类号 |
H01L31/0224 |
代理机构 |
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代理人 |
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主权项 |
1. A method for fabricating a photovoltaic device, comprising:
forming a double layer transparent conductive oxide on a transparent substrate including:
forming a doped electrode layer on the substrate; andforming a buffer layer on the doped electrode layer by reducing dopant concentration to zero, the buffer layer including an undoped or p-doped form of a same material as the doped electrode layer; and forming a light-absorbing semiconductor structure including a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer. |
地址 |
Armonk NY US |