Insulated Gate Bipolar Transistor and Production Method Thereof

摘要

One embodiment of the present invention includes preparing a first conductive semiconductor substrate manufactured using the MCZ method. A second conductive base layer (12), first conductive emitter regions (13), and gate electrodes (14) are formed on a first surface of the semiconductor substrate. The semiconductor substrate is thinned by machining the second surface of the semiconductor substrate and a second conductive collector layer (15) is formed by implanting boron into the thinned second surface. A first conductive buffer layer (16) having a higher impurities concentration than the semiconductor substrate is formed by implanting hydrogen into an area inside the semiconductor substrate and adjacent to the collector layer (15).

主权项

1. A method of producing an insulated gate bipolar transistor, comprising:
preparing a first conductive type semiconductor substrate manufactured by an MCZ method; forming a second conductive type base layer on a first surface of the semiconductor substrate; forming a first conductive type emitter region on a surface of the base layer; forming a gate electrode that is insulated from the emitter region, the base layer and the semiconductor substrate on the first surface; thinning the semiconductor substrate by machining the second surface of the semiconductor substrate; forming a second conductive type collector layer by implanting boron into the thinned second surface of the semiconductor substrate; and forming a first conductive type buffer layer having a higher impurity concentration than the semiconductor substrate by implanting hydrogen into an area inside the semiconductor substrate and adjacent to the collector layer.