| 摘要 |
Provided are an imaging panel and imaging device capable of reducing X-ray irradiation and suppressing a shift in TFT threshold voltage during X-ray irradiation. An imaging panel equipped with an imaging unit containing a plurality of pixels 13 for generating an electric charge based on X-rays emitted from an X-ray source, and a thin-film transistor 14 for reading the electric charge generated in the pixels 13. The thin-film transistor 14 has a gate 141, an oxide semiconductor layer 142, and a source 143S and a drain 143D that are formed in one section on the oxide semiconductor layer 142 by wet-etching a metal film formed on the oxide semiconductor layer 142. The oxide semiconductor layer 142 contains indium, tin, gallium, and oxygen. |
