| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with a more reliable joining interface.SOLUTION: A semiconductor device 1 comprises: a first semiconductor portion 10 having a first metal film 16 formed on the surface thereof on a joining interface Sj side; a second semiconductor portion 20 having a second metal film 26 joined to the first metal film 16 on the joining interface Sj; and an interface barrier portion 28. A surface area of the second metal film 26 on the joining interface Sj side is smaller than a surface area of the first metal film 16 on the joining interface Sj side. The interface barrier portion 28 is provided in a portion of a face region of the first metal film 16 on the joining interface Sj side in which the first metal film 16 is not joined to the second metal film 26. |
