| 摘要 |
PROBLEM TO BE SOLVED: To secure the balance between the improvement of write characteristics of a nonvolatile semiconductor memory and the suppression of the occurrence of a snap-back phenomenon.SOLUTION: A nonvolatile semiconductor memory write control circuit 30, used for a nonvolatile semiconductor memory 12 that includes a drain connected to a bit line 14, a control gate connected to a word line 16, and a source connected to a ground, comprises: a ground transistor 32 which is connected between the source and the ground of the nonvolatile semiconductor memory 12 and a gate voltage of which is set to a constant value; and a voltage difference setting unit 34 which sets a drain-source voltage of the nonvolatile semiconductor memory 12 to be higher than a control gate-source voltage by a predetermined voltage value and outputs the drain-source voltage to the control gate.SELECTED DRAWING: Figure 1 |
