Fabrication of dual damascene pattern involves forming via hole and trench up to respective predetermined depth, extending the via hole, and etching protective film exposed through the via hole to expose lower conductive pattern

摘要

Dual damascene pattern is fabricated by forming a via hole and a trench up to respective predetermined depth of insulating layer through a second protective film, extending the via hole up to a point at which a first protective film is exposed, and etching first protective film exposed through the via hole to expose conductive pattern and form the dual damascene pattern. Fabrication of dual damascene pattern involves: (A) forming a lower conductive structure on a lower insulating layer (100); (B) sequentially forming a first protective film (210), a second insulating layer (330), and a second protective film (250) on the lower insulating layer and the lower conductive structure; (C) forming a via hole (410) up to a first predetermined depth of the second insulating layer through the second protective film; (D) forming a trench up to a second predetermined depth of the second insulating layer through the second protective film, and simultaneously, extending the via hole up to a point at which the first protective film is exposed; and (E) selectively etching the first protective film exposed through the via hole to expose the lower conductive pattern and form the dual damascene pattern.