METHOD OF GROWING GALLIUM NITRIDE CRYSTAL

摘要

A method of growing a gallium nitride crystal is provided to reduce a density of dislocations effectively by forming a stable grain boundary at an interface of two different crystal regions, in an epitaxial growth method. A mask(M) inhibiting epitaxial growth of a gallium nitride crystal is formed partially on a ground substrate(U). The gallium nitride crystal is grown epitaxially on the ground substrate in which the mask is formed, while doping carbon. A first crystal region is grown from a periphery region of the mask toward inside, and an c-axis direction is reversed in the first crystal region relative to a second crystal region grown on a region where the mask is not formed in the ground substrate.