NONVOLATILE SEMICONDUCTOR MEMORY

摘要

PROBLEM TO BE SOLVED: To prevent an erroneous write caused by a compact memory cell.

SOLUTION: This nonvolatile semiconductor memory is equipped with: a NAND string constituted of a plurality of memory cells connected in series; two select gate transistors connected one by one at both ends of the NAND string; and a write control circuit for making first write condition (mode 2) for a selection cell when one of two memory cells adjacent to two select gate transistors is selected among the plurality of memory cells different from a second write condition (mode 1) for a selection cell when a memory cell not adjacent to two select gate transistors is selected.

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