| 摘要 |
PROBLEM TO BE SOLVED: To provide a dopant gas injecting method by which a dopant gas can be sufficiently diffused in a semiconductor melt when a vaporizable dopant is doped into the semiconductor melt. SOLUTION: The dopant injecting method comprises injecting a vaporized dopant gas into a semiconductor melt in a crucible 31. In the method, the dopant gas is blown to the semiconductor melt, while alternately rotating the crucible 31 clockwise and counterclockwise around a supporting shaft 36 along a flow direction of the dopant gas. A convention flow is generated at the inside of the semiconductor melt by rotating the crucible 31, and the blown dopant is easily diffused in the semiconductor melt. COPYRIGHT: (C)2008,JPO&INPIT
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