| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor substrate and a semiconductor device including a GaN layer having a good crystal property and assuring a small warpage. <P>SOLUTION: The semiconductor substrate and semiconductor device include an AIN layer 12 provided on a Si substrate 10, an AlGaN layer 14 provided on the AIN layer 12 to have a composition ratio of Al of 0.3 or more and 0.6 or less, and a GaN layer 16 provided on an AlGaN layer 14. According to the semiconductor substrate and semiconductor device, wafer warpage can be reduced by setting the Al composition ratio of the AlGaN layer 14 to 0.6 or less and GaN layer crystal property can be improved by setting the composition ratio to 0.3 or more. <P>COPYRIGHT: (C)2008,JPO&INPIT |
