发明名称 MICROBATCH DEPOSITION CHAMBER WITH RADIANT HEATING
摘要 The present invention generally provides an apparatus and method for processing and transferring substrates in an epitaxial deposition chamber. Embodiments of the invention described herein are adapted to maximize chamber throughput and improve film deposition uniformity. In one embodiment, two substrates are processed simultaneously using radiant heating of the substrates in a cold wall, low pressure chemical vapor deposition reactor.
申请公布号 US2008220150(A1) 申请公布日期 2008.09.11
申请号 US20070682296 申请日期 2007.03.05
申请人 APPLIED MATERIALS, INC. 发明人 MERRY NIR;CHANDRASEKHAR BALASUBRAMANYAM
分类号 C23C16/52;B05D3/02;C23C16/00 主分类号 C23C16/52
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