| 摘要 |
A silicon carbide single crystal substrate (11) including a first major surface (11a) that is off-axis from a {0001} plane and a first peripheral edge part (11c2) provided continuous with the first major surface (11a) is prepared. A silicon carbide epitaxial layer (12) is formed on the first major surface (11a). The silicon carbide epitaxial layer (12) includes a second major surface (12b) in contact with the first major surface (11a), a third major surface (12a2) on the opposite side from the second major surface (12b), and a second peripheral edge part (12c2) provided continuous with each of the second major surface (12b) and the third major surface (12a2). A peripheral region (C) that includes the first peripheral edge part (11c2) and second peripheral edge part (12c2) is removed. The thickness of the silicon carbide epitaxial layer (12) in a direction that is perpendicular to the third major surface (12a2) is 50 μm or more. |
