| 发明名称 |
Metal Gate Stack Having TaAlCN Layer |
| 摘要 |
A method includes forming a gate stack over a semiconductor substrate; forming an interlayer dielectric layer surrounding the gate stack; and at least partially removing the gate stack, thereby forming an opening. The method further includes forming a multi-function wetting/blocking layer in the opening, a work function layer over the multi-function blocking/wetting layer, and a conductive layer over the work function layer. The work function layer, the multi-function wetting/blocking layer, and the conductive layer fill the opening. The multi-function wetting/blocking layer includes aluminum, carbon, nitride, and one of: titanium and tantalum. |
| 申请公布号 |
US2016254157(A1) |
申请公布日期 |
2016.09.01 |
| 申请号 |
US201615149978 |
申请日期 |
2016.05.09 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
JANGJIAN SHIU-KO;WANG TING-CHUN;JENG CHI-CHERNG;LIU CHI-WEN |
| 分类号 |
H01L21/28;H01L29/49;H01L29/78;H01L29/16;H01L29/161;H01L29/165;H01L29/66;H01L29/08 |
主分类号 |
H01L21/28 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
forming a gate stack over a semiconductor substrate; forming an interlayer dielectric layer surrounding the gate stack; at least partially removing the gate stack, thereby forming an opening; and forming a multi-function wetting/blocking layer in the opening, a work function layer over the multi-function blocking/wetting layer, and a conductive layer over the work function layer, wherein the work function layer, the multi-function wetting/blocking layer, and the conductive layer fill the opening, and further wherein the multi-function wetting/blocking layer includes aluminum, carbon, nitride, and one of: titanium and tantalum. |
| 地址 |
Hsin-Chu TW |
