METHOD FOR GENERATING PARAMETER PATTERN, ION IMPLANTATION METHOD AND FEED FORWARD SEMICONDUCTOR MANUFACTURING METHOD

摘要

The present disclosure provides a method for generating a parameter pattern including: performing a plurality of measurements upon a plurality of regions on a surface of a workpiece to obtain a plurality of measured results; and deriving a parameter pattern according to the plurality of measured results by a computer; wherein the parameter pattern includes a plurality of regional parameter values corresponding to each of the plurality of regions on the surface of the workpiece. The present disclosure provides a Feed Forward semiconductor manufacturing method including: forming a layer with a desired pattern on a surface of a workpiece; deriving a control signal including a parameter pattern according to spatial dimension measurements against the layer with the desired pattern distributed over a plurality of regions of the surface of the workpiece; and performing an ion implantation on the surface of the workpiece according to the control signal.

主权项

1. A method for generating a parameter pattern, comprising:
performing a plurality of measurements upon a plurality of regions on a surface of a workpiece to obtain a plurality of measured results; and deriving a parameter pattern according to the plurality of measured results by a computer; wherein the parameter pattern comprises a plurality of regional parameter values corresponding to each of the plurality of regions on the surface of the workpiece.