High Speed And Low Power Sense Amplifier

摘要

An improved sensing circuit is disclosed that utilizes a bit line in an unused memory array to provide reference values to compare against selected cells in another memory array. A circuit that can perform a self-test for identifying bit lines with leakage currents about an acceptable threshold also is disclosed.

主权项

1. A sensing circuit for use in a memory device, comprising:
a first array of memory cells comprising a selected memory cell corresponding to a word line and a first bit line; a second array of memory cells comprising a plurality of memory cells corresponding to a second bit line; a sensing circuit comprising a pre-charge circuit associated with the plurality of memory cells and a comparator with a first input and a second input and an output, wherein the first input is determined by the value stored in the selected memory cell and the second input is determined by the second pre-charge circuit and the output of the comparator indicates the value stored in the selected memory cell.