| 发明名称 |
Memory Systems and Memory Programming Methods |
| 摘要 |
Memory systems and memory programming methods are described. In one arrangement, a memory system includes a memory cell configured to have a plurality of different memory states, an access circuit coupled with the memory cell and configured to provide a first signal to a memory element of the memory cell to program the memory cell from a first memory state to a second memory state, and a current source coupled with the memory cell and configured to generate a second signal which is provided to the memory element of the memory cell after the first signal to complete programming of the memory cell from the first memory state to the second memory state. |
| 申请公布号 |
US2016254051(A1) |
申请公布日期 |
2016.09.01 |
| 申请号 |
US201615150168 |
申请日期 |
2016.05.09 |
| 申请人 |
Micron Technology, Inc. |
发明人 |
Fackenthal Richard E.;Lombardo Simone |
| 分类号 |
G11C13/00 |
主分类号 |
G11C13/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory system comprising:
a memory cell configured to have a plurality of different memory states; an access circuit coupled with the memory cell and configured to provide a first signal to a memory element of the memory cell to program the memory cell from a first memory state to a second memory state; and a current source coupled with the memory cell and configured to generate a second signal which is provided to the memory element of the memory cell after the first signal to complete programming of the memory cell from the first memory state to the second memory state. |
| 地址 |
Boise ID US |
