Manufacturing method of semiconductor integrated circuit device

摘要

A solid-state imaging element has problems of occurrence of dark current due to influences of an interface state at an interface between a semiconductor and an insulating film, e.g., between silicon and silicon oxide, and of charges generated in a device manufacturing process, which leads to signal noise, thereby degrading the function of a device, specifically, the imaging quality. The outline of the invention in the present application relates to a manufacturing method of a semiconductor integrated circuit device with a surface-irradiation type image sensor, which includes irradiating a main surface of a semiconductor wafer with photodiodes formed therein, with far-ultraviolet ray after forming a lowermost wiring layer of a multi-layer wiring and before forming a color filter layer, and then applying a heat treatment to the wafer.

主权项

1. A method for manufacturing a semiconductor integrated circuit device, comprising the steps of:
(a) providing a semiconductor wafer with numerous chip regions, the semiconductor wafer having numerous photodiodes formed in a matrix at a semiconductor region in a first main surface of the semiconductor wafer in each of the chip regions so as to configure a surface-irradiation type image sensor; (b) after the step (a), forming a multi-layer wiring layer over the first main surface of the semiconductor wafer; and (c) after the step (b), forming a color filter layer over the multi-layer wiring layer, wherein the step (b) comprises sub-steps of: (b1) forming a first wiring layer included in the multi-layer wiring layer; (b2) after the step (b1), irradiating the first main surface of the semiconductor wafer with far-ultraviolet ray; and (b3) after the step (b2), applying a heat treatment to the semiconductor wafer.