发明名称 Elevated photodiode with a stacked scheme
摘要 A device includes an image sensor chip having formed therein an elevated photodiode, and a device chip underlying and bonded to the image sensor chip. The device chip has a read out circuit electrically connected to the elevated photodiode.
申请公布号 US9530811(B2) 申请公布日期 2016.12.27
申请号 US201514841252 申请日期 2015.08.31
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Wan Meng-Hsun;Chu Yi-Shin;Chen Szu-Ying;Chen Pao-Tung;Liu Jen-Cheng;Yaung Dun-Nian
分类号 H01L31/02;H01L31/0224;H01L27/146;H01L31/0352;H01L31/18;H01L31/0376 主分类号 H01L31/02
代理机构 Slater Matsil, LLP 代理人 Slater Matsil, LLP
主权项 1. A device comprising: an elevated photodiode over a semiconductor substrate of an image sensor; and a semiconductor device bonded to the semiconductor substrate of the image sensor, wherein the semiconductor device comprises a read out circuit electrically coupled to the elevated photodiode.
地址 Hsin-Chu TW