Display device

摘要

A display device with excellent display quality is provided. The display device includes a transistor over a first substrate, an inorganic insulating film in contact with the transistor, and an organic insulating film in contact with the inorganic insulating film. The transistor includes a gate electrode over the first substrate, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film in contact with one surface of the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film. The inorganic insulating film is in contact with the other surface of the oxide semiconductor film. The organic insulating film overlaps with the oxide semiconductor film with the inorganic insulating film provided therebetween and is separated. Note that the thickness of the organic insulating film is preferably greater than or equal to 500 nm and less than or equal to 10 μm.

主权项

1. A display device comprising:
a transistor over a first substrate; an inorganic insulating film over the transistor; an organic insulating film on and in contact with the inorganic insulating film; and a pixel electrode on and in contact with the inorganic insulating film, the pixel electrode electrically connected to the transistor, wherein the transistor comprises:
a gate electrode over the first substrate;an oxide semiconductor film over the gate electrode; anda gate insulating film between the gate electrode and the oxide semiconductor film, wherein an upper surface of the oxide semiconductor film is in contact with the inorganic insulating film, wherein the organic insulating film overlaps with the oxide semiconductor film with the inorganic insulating film provided therebetween, and wherein an end portion of the gate electrode is positioned on an outer side of an end portion of the organic insulating film.