| 发明名称 |
Semiconductor device and method of fabricating the same |
| 摘要 |
A semiconductor device includes a via structure having a top surface with a planar portion and a protrusion portion that is surrounded by the planar portion, and includes a conductive structure including a plurality of conductive lines contacting at least a part of the top surface of the via structure. |
| 申请公布号 |
US9530726(B2) |
申请公布日期 |
2016.12.27 |
| 申请号 |
US201314052691 |
申请日期 |
2013.10.11 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Moon Kwang-jin;Park Byung-Iyul;Lim Dong-chan;Jung Deok-young;Choi Gil-heyun;Bae Dae-lok;Kang Pil-kyu |
| 分类号 |
H01L21/768;H01L23/48;H01L23/522;H01L23/528 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
Choi Monica H. |
| 主权项 |
1. A semiconductor device comprising:
a via structure having a top surface with a planar portion and a protrusion portion that is surrounded by the planar portion, wherein the planar portion and the protrusion portion are integral portions comprised of a same material of the via structure with atomic continuity between the planar portion and the protrusion portion; and a conductive structure including a plurality of conductive lines, wherein each of said conductive lines contacts at least a part of the top surface of the via structure, and wherein said conductive structure is not formed over at least part of the protrusion portion of the top surface of the via structure. |
| 地址 |
Suwon-si KR |
