发明名称 ELECTROSTATIC DISCHARGE PROTECTION FOR BIPOLAR SEMICONDUCTOR CIRCUITRY
摘要 Multiple emitter-base regions arc formed on a single contiguous collector. The multiple emitter-base regions are cascoded such that the base of one emitter-base region is directly wired to the emitter of an adjacent emitter-base region. An electrostatic discharge (ESD) protection unit, comprising a single collector and multiple emitter-base regions, provides protection against an ESD event of one type, i.e., a positive or negative voltage surge. The inventive ESD protection structure comprises a parallel connection of two ESD protection units, each providing a discharge path for electrical charges of opposite types, and provides ESD protection for both types of voltage swing in the circuit.
申请公布号 US2009152680(A1) 申请公布日期 2009.06.18
申请号 US20070958558 申请日期 2007.12.18
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 VOLDMAN STEVEN H.
分类号 H01L27/082 主分类号 H01L27/082
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