METHOD FOR FABRICATING METAL SILICIDE LAYER AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME

摘要

The technical idea of the present invention provides a method for fabricating a metal silicide layer to minimize contact resistance, and a method for fabricating a semiconductor device using the same. The method for fabricating a metal silicide layer includes a step of forming a doping layer having dopant in a surface part of a semiconductor substrate; a step of forming a metal-silicon composite layer by depositing metal and silicon on the doping layer; and a step of forming a metal silicide layer by performing silicidation on the metal-silicon composite layer.