RESISTIVE MEMORY DEVICE, RESISTIVE MEMORY SYSTEM AND OPERATING METHOD THEREOF

摘要

The present disclosure relates to a resistive memory system including a plurality of memory cells. The resistive memory system comprises: a memory device which includes a resistive memory cell array; and a controller which generates write data to be written to the memory cell array by encoding input data so that the input data corresponds to an erase state and a plurality of program states into which memory cells can enter, wherein the input data is encoded such that at least one of the number of memory cells in a first program state and the number of memory cells in a second program state is smaller than at least one of the number of memory cells in the erase state and the number of memory cells in the other program states; wherein the first program state can have the highest resistance level among the program states, and the second program state can have the second highest resistance level among the program states.