| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for evaluating the conductivity of an oxide semiconductor film in the thickness direction.SOLUTION: With regard to a sample having an oxide semiconductor film provided on an insulating surface in contact therewith, first step 101 of measuring the thickness and the sheet resistance of the oxide semiconductor film, second step 102 of etching a part of the oxide semiconductor film, and third step 103 of measuring the thickness and the sheet resistance of the oxide semiconductor film etched partially are carried out in this order. For example, the thickness of the oxide semiconductor film is measured using spectral ellipsometry, the sheet resistance of the oxide semiconductor film is measured using a four-point probe method, and wet etching is used for etching the oxide semiconductor film. |
