Thin film transistor and method for driving the same
摘要
Disclosed are a thin film transistor and a driving method thereof. The disclosed thin film transistor includes a channel layer, a bottom gate electrode which is located on the lower side of the channel layer and drives a first region of the channel layer, and a top gate electrode which is located on the upper side of the channel layer and drives a second region of the channel layer. The thin film transistor controls the conductivity of one channel layer by using the bottom gate electrode and the top gate electrode.
申请公布号
KR20150028122(A)
申请公布日期
2015.03.13
申请号
KR20130106820
申请日期
2013.09.05
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KIM, EOK SU;RYU, MYUNG KWAN;SON, KYOUNG SEOK;LEE, SUN HEE