| 摘要 |
The present technique relates to a 3 dimension semiconductor device and a method of manufacturing the same. A 3 dimension semiconductor device may include a semiconductor substrate, a common source region which is formed in the upper part of the semiconductor substrate and is extended with a line type, a horizontal channel region which is formed in the upper part of the common source region and is practically horizontal to the surface of the semiconductor substrate, and an active region which includes a source and a drain region which are branched from the horizontal channel region in a direction practically vertical to the surface of the semiconductor substrate, and a gate which is formed in a space between the source region and the drain region. |
