Radiation hardened microelectronic device

摘要

A "hardened by design" approach is described that identifies a radiation-sensitive region of a microelectronic device, constructing wells in the region with low volume, constructing a conductive path in the region so as to shield sensitive region and constructing the conductive path from low resistance material. An exemplary SRAM cell uses these principles and may be divided and interleaved in order to further radiation harden the device.