| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for depositing a DLC film, and a manufacturing apparatus of the DLC film in which a smooth DLC film can be easily deposited by suppressing the growth of diamond particles, and the band gap can also be controlled. <P>SOLUTION: A substrate 9 is cooled by a substrate holder 11, so that the temperature of the substrate is not raised excessively. A hydrogen gas and a hydrocarbon-based gas (CH<SB>4</SB>, C<SB>2</SB>H<SB>4</SB>, C<SB>2</SB>H<SB>2</SB>, C<SB>4</SB>H<SB>6</SB>, C<SB>4</SB>H<SB>8</SB>, C<SB>5</SB>H<SB>8</SB>) are used as components of a raw material gas in the plasma chemical vapor growth method by the DC pulse discharge, and the mixture ratio of the hydrocarbon-based gas is adjusted to be 1-50%. Thus, the growth of diamond particles in the DLC film can be suppressed, and the DLC film with the band gap thereof being controlled from 3.9-0.5 eV can be obtained. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
