发明名称 MULTIPLE LEVEL PROGRAMMING IN A NON-VOLATILE MEMORY DEVICE
摘要 The programming method of the present invention minimizes program disturb by initially programming cells on the same word line with the logical state having the highest threshold voltage. The remaining cells on the word line are programmed to their respective logical states in order of decreasing threshold voltage levels.
申请公布号 US2008219055(A1) 申请公布日期 2008.09.11
申请号 US20080125147 申请日期 2008.05.22
申请人 MICRON TECHNOLOGY, INC. 发明人 NAZARIAN HAGOP A.
分类号 G11C11/34 主分类号 G11C11/34
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