发明名称 |
Photo Diodes Having a Conductive Plug Contact to a Buried Layer and Methods of Manufacturing the Same |
摘要 |
Methods of manufacturing a photo diode include sequentially forming a buried layer of a first conductivity type, a first epitaxial layer of the first conductivity type, and a second epitaxial layer of a second conductivity type on a substrate. The second and first epitaxial layers are etched to form a trench that exposes a portion of the buried layer. A conductive plug of the first conductivity type is formed in the trench. A first electrode is formed on an upper surface of the second epitaxial layer. A second electrode may be formed to contact an upper surface of the conductive plug. Photodiodes having a conductive plug contact to a buried layer are also provided.
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申请公布号 |
US2009008739(A1) |
申请公布日期 |
2009.01.08 |
申请号 |
US20080212437 |
申请日期 |
2008.09.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BAE SUNG-RYOUL;NAM DONG-KYUN |
分类号 |
H01L27/14;H01L31/103;H01L21/00;H01L21/28;H01L21/30;H01L21/46;H01L21/84;H01L31/0224;H01L31/06;H01L31/072;H01L31/075;H01L31/10;H01L31/18 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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