| 摘要 |
PROBLEM TO BE SOLVED: To provide a high electron mobility transistor capable of achieving both a suppression in an increase of leakage current and a reduction in density of pits, and a method for manufacturing a high electron mobility transistor.SOLUTION: A high electron mobility transistor includes an AlN layer 12 provided on a substrate 11, a first GaN layer 13 provided on the AlN layer 12 and having a carbon concentration of less than 1×10atoms/cm, and a second GaN layer 14 provided on the first GaN layer 13 and having a carbon concentration of 2×10atoms/cmor more. The total value of the thickens of the first GaN layer 13 and the thickness of the second GaN layer 14 is 400 nm or more and 1,000 nm or less.SELECTED DRAWING: Figure 1 |
