TRENCH MOSFET HAVING AN INDEPENDENT COUPLED ELEMENT IN A TRENCH

摘要

A trench MOSFET is disclosed that includes a semiconductor substrate having a vertically oriented trench containing a gate. The trench MOSFET further includes a source, a drain, and a conductive element. The conductive element, like the gate is contained in the trench, and extends between the gate and a bottom of the trench. The conductive element is electrically isolated from the source, the gate, and the drain. When employed in a device such as a DC-DC converter, the trench MOSFET may reduce power losses and electrical and electromagnetic noise.

主权项

1. An apparatus comprising:
a first transistor comprising:
a first trench formed in a first semiconductor substrate;a first source;a first drain;a first gate;a first conductive element in the first trench;wherein the first conductive element extends between the first gate and a bottom of the first trench;wherein the first conductive element is isolated from the first source and the first gate by an insulating material; a circuit for generating a first pulse width modulated (PWM) signal at a first output, wherein the first output of the circuit is electrically coupled to the first gate.