| 摘要 |
<p>A method for thinning a semiconductor wafer having a semiconductor element (2) on its surface, by polishing the back thereof. This method comprises bonding the surface of the semiconductor wafer (1) to a support (4) through an adhesive layer; polishing the back of the semiconductor wafer while holding the support; and separating the thinned semiconductor wafer from the support. Preferably, a semiconductor wafer is employed as the support, and a thermally separable double-coated sheet is employed as the adhesive layer. The semiconductor wafer is heated and separated after ground. As a result, the semiconductor wafer having a thickness of 120 µm or less can be manufactured at a low cost while suppressing the cracking or chipping to a minimum at the working step. Thus, there is provided a semiconductor wafer which is made thinner than those of the prior art while having a diameter as large as 150 mm or more.</p> |
