发明名称 APPARATUS AND METHODS FOR MULTI-LEVEL SENSING IN A MEMORY ARRAY
摘要 A method for sensing a signal received from an array cell within a memory array, the method comprising the steps of generating an analog voltage Vddr proportional to a current of a selected array cell of the memory array, and comparing the analog voltage Vddr with a reference analog voltage Vcomp to generate an output digital signal. A method is also provided for sensing a memory cell by transforming a signal from a memory cell to a time delay, and sensing the memory cell by comparing the time delay to a time delay of a reference cell. Related apparatus is also disclosed.
申请公布号 US2006285402(A1) 申请公布日期 2006.12.21
申请号 US20060464253 申请日期 2006.08.14
申请人 SAIFUN SEMICONDUCTORS LTD. 发明人 DADASHEV OLEG;BETSER YORAM;MAAYAN EDUARDO
分类号 G11C5/14;G11C11/56 主分类号 G11C5/14
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