| 发明名称 |
BICMOS DEVICE AND METHOD OF MANUFACTURING A BICMOS DEVICE |
| 摘要 |
A biCMOS device including a bipolar transistor and a Polysilicon/Insulator/Polysilicon (PIP) capacitor is disclosed. A biCMOS device may have a relatively low series resistance at a bipolar transistor. A bipolar transistor may have a desirable amplification rate.
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| 申请公布号 |
US2007099374(A1) |
申请公布日期 |
2007.05.03 |
| 申请号 |
US20060553698 |
申请日期 |
2006.10.27 |
| 申请人 |
KO KWANG YOUNG |
发明人 |
KO KWANG YOUNG |
| 分类号 |
H01L21/8249;H01L29/76;H01L29/94;H01L31/00 |
主分类号 |
H01L21/8249 |
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