发明名称 |
GATE DRIVER CIRCUIT FOR SWITCHING DEVICE |
摘要 |
A gate driver circuit of a voltage drive type power semiconductor switching device capable of speeding up di/dt and dv/dt even during large-current driving to thereby reduce the switching loss is disclosed. This power semiconductor switching device gate driving circuit includes a drive circuit which applies a drive signal to the gate electrode of the power semiconductor switching device and a measurement unit for measuring a flow current of the power semiconductor switching device. Based on a detected value of the flow current of the power semiconductor switching device, the gate is made variable in mirror voltage thereof.
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申请公布号 |
US2007200613(A1) |
申请公布日期 |
2007.08.30 |
申请号 |
US20070624717 |
申请日期 |
2007.01.19 |
申请人 |
ISHIKAWA KATSUMI;SATO YUTAKA;NAGASU MASAHIRO;ISHIDA SEIJI |
发明人 |
ISHIKAWA KATSUMI;SATO YUTAKA;NAGASU MASAHIRO;ISHIDA SEIJI |
分类号 |
H03K17/687 |
主分类号 |
H03K17/687 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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