| 摘要 |
<p>The present invention relates to a susceptor for a reactor for epitaxial growth, consisting of a disc-shaped body (20, 30) made of graphite having a first face and a second face; the first face comprises at least one zone, in particular a circular-shaped recess (21) or relief (31) adapted to receive a substrate to be subjected to epitaxial growth; the first face exposes a first upper surface (22, 32) corresponding to such a zone (21, 31) and a second upper surface (23, 33) which surrounds such a zone (21, 31); the second face exposes a lower surface (24, 34); the second upper surface (22, 33) and the lower surface (24, 34) are coated with a layer of silicon carbide; so, the outward curvature of the susceptor is limited during the life thereof, i.e. after having been used for many processes of epitaxial growth of silicon carbide.</p> |
