发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a technique which thins a semiconductor device. <P>SOLUTION: A chip (semiconductor chip) 103 is fixed with an insulating layer 101 (a first insulating layer) and a plurality of wiring 102 (first conductive lines) formed on the insulating layer 101 in a predetermined pattern as a supporting substrate, and a plurality of chip electrodes (first electrodes) 105 formed on a main surface (a first main surface) 103a of the chip 103, and the plurality of wiring 102, are electrically connected by wires (conductive member) 106, respectively. The insulating layers 101, the wiring 102, the chip 103, and wires 106 are covered with an insulating layer (a second insulating layer) 107 made up of a material of a main material common to the insulating layer 101. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2008047794(A) 申请公布日期 2008.02.28
申请号 JP20060223969 申请日期 2006.08.21
申请人 RENESAS TECHNOLOGY CORP 发明人 SHIMANUKI YOSHIHIKO
分类号 H01L23/12 主分类号 H01L23/12
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