| 摘要 |
A thermoelectric transducer is provided, where a decrease in conversion efficiency due to uneven characteristics of semiconductors is resolved and a decrease in adhesion strength between each element unit and an electrode due to a heat expansion coefficient between the respective thermoelectric transducers. In addition, an improvement of electro thermal conversion efficiency is intended by modifying the structure of the single device. Single element unit ( 13 ), which are made off semiconductor of the same type constructed of sintered body cells each containing oxide of a metal element, an oxide of a rare-earth element, and manganese are arranged on a board ( 5, 12 ) of a thermoelectric transducer ( 10 ). Film-shaped thin-film electrodes are arranged on cooling and heating surfaces so to be integral with the sintered body cell. On these sides, lead wires ( 16 ) are connected to each other in series.
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