发明名称 |
METHOD OF MANUFACTURING DUAL ORIENTATION WAFERS |
摘要 |
Disclosed is a method of manufacturing dual orientation wafers. A trench is formed in a multi-layer wafer to a silicon substrate with a first crystalline orientation. The trench is filled with a silicon material (e.g., amorphous silicon or polysilicon trench). Isolation structures are formed to isolate the silicon material in the trench from a semiconductor layer with a second crystalline orientation. Additional isolation structures are formed within the silicon material in the trench and within the semiconductor layer. A patterned amorphization process is performed on the silicon material in the trench and followed by a recrystallization anneal such that the silicon material in the trench recrystallizes with the same crystalline orientation as the silicon substrate. The resulting structure is a semiconductor wafer with isolated semiconductor areas on the same plane having different crystalline orientations as well as isolated sections within each semiconductor area for device formation.
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申请公布号 |
US2008096370(A1) |
申请公布日期 |
2008.04.24 |
申请号 |
US20070955436 |
申请日期 |
2007.12.13 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ANDERSON BRENT A.;ELLIS-MONAGHAN JOHN J.;LOISEAU ALAIN;PETERSON KIRK D. |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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