| 摘要 |
The invention relates to a rear-contact solar cell wherein emitter regions (5) and highly doped base regions (7) are defined on a semiconductor substrate of the base semiconductor type on a surface of a rear side of the cell, the emitter regions and the base regions being electrically contacted with emitter contacts (11) and base contacts (13), respectively. An interface (21) in which highly doped base regions (7) adjoin highly doped emitter regions (5) is larger than 5% of the rear side surface (3) of the semiconductor substrate (1). To achieve this, the emitter regions (5) overlap the base regions (7) in overlap regions (19) laterally in planes that are parallel relative to the rear side surface (3) of the semiconductor substrate (1). Owing to the large interface (21) between the highly doped emitter and base regions (5, 7), it is possible to produce a p+n+ junction in this region which junction allows a sufficiently strong current to flow in the reverse direction when the voltages are high enough, to function as a bypass diode for the solar cell. |
