| 摘要 |
The present teachings relate to patterned high-k thin film dielectrics prepared from a photopatternable composition based upon a partially fluorinated polymer that includes a fluorinated repeating unit and at least one photocrosslinkable repeating unit of formula (I), (II), (III), (IV) and/or (V). The patterned dielectrics may be incorporated in an organic thin film transistor adapted to operate at voltages less than about |40| V. |
