| 摘要 |
Provided in one embodiment is a light emitting diode comprising: a light emitting structure including a first conductive semiconductor layer, an active layer on top of the first conductive semiconductor layer, and a second conductive semiconductor layer on top of the active layer; a first electrode arranged on a portion of the first conductive semiconductor layer; an insulating layer, which is arranged on a portion of the first electrode, the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer, and which has a DBR structure; and a second electrode arranged on the second conductive semiconductor layer, wherein the first electrode comes into contact with the insulating layer via a first surface and is exposed to the insulating layer via a second surface opposite the first surface. |
