PHOTORESIST RESIDUE CLEANING FLUID

摘要

A cleaning fluid free of fluoride and hydroxylamine and used for removing a photoresist etching residue, and a composition thereof, the fluid, having a low etching property, comprising: a) an alcohol amine, b) a solvent, c) water, d) a phenol, e) an ethoxylated acetylenic alcohol compound, f) a hydrazine and a derivative thereof, and g)a polyol. The cleaning fluid for removing a photoresist etching residue and having a low etching property can rapidly remove a crosslinked and hardened photo-etching glue after complex chemical changes caused by hard baking, dry-etching, ashing and plasma implantation, and can remove the photoresist residue on a metal wire, a via and a metal pad wafer without attacking the substrate, including metals such as aluminum or copper and non-metals such as silicon dioxide. The cleaning fluid has a good prospect of application in the field of semiconductor chip cleaning and the like.