发明名称 METHOD FOR PRODUCING LAMINATED SUBSTRATE HAVING INSULATING LAYER AT PORTION OF SUBSTRATE
摘要 According to the present invention, there is provided a method for manufacturing a bonded substrate that has an insulator layer in part of the bonded substrate, the method comprising: a porous layer forming step of partially forming a porous layer or forming a porous layer whose thickness partially varies on a bonding surface of the base substrate; an insulator layer forming step of performing a heat treatment to the base substrate having the porous layer formed thereon to change the porous layer into the insulator layer, and thereby forming the insulator layer whose thickness partially varies on the bonding surface of the base substrate; an insulator layer removing step of removing the insulator layer whose thickness varies by an amount corresponding to a thickness of a small-thickness portion by etching; a bonding step of bonding the bonding surface of the base substrate on which an unetched remaining insulator layer is exposed to a bond substrate; and a thin film forming step of reducing a thickness of the bonded bond substrate and thereby forming a thin film layer. As a result, the method for easily manufacturing a bonded substrate having an insulator layer in part of the substrate with use of the porous silicon technology can be provided.
申请公布号 EP2709140(B1) 申请公布日期 2016.10.26
申请号 EP20120782018 申请日期 2012.04.10
申请人 SHIN-ETSU HANDOTAI CO., LTD. 发明人 OHTSUKI, TSUYOSHI;QU, WEI FENG;TAHARA, FUMIO;OOI, YUUKI;MITANI, KIYOSHI
分类号 H01L21/84;H01L21/762;H01L27/12 主分类号 H01L21/84
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