| 摘要 |
An electrostatic discharge (ESD) protection device to manage leakage current can, in response to a power good (PGOOD) signal, draw the gate terminal of an ESD clamp device to a voltage below ground. The device also drives an inverted copy of the PGOOD signal to a gated inverter, which can inhibit the gated inverter output from drawing the ESD clamp device gate terminal to ground. The ESD protection device also includes the ESD clamp device to, in response to the gate terminal of the ESD clamp device being drawn to a bias voltage less than ground, allow a leakage current to flow through the ESD clamp device that is less than a leakage current allowed to flow in response to the ESD clamp device gate terminal being drawn to ground. |
| 主权项 |
1. An electrostatic discharge (ESD) protection device to manage leakage current, the ESD protection device comprising:
a first N-channel field-effect transistor (NFET) configured to, in response to receiving a power good (PGOOD) signal at a gate terminal of the first NFET, draw a gate terminal of an ESD clamp device to a bias voltage less than ground, the ESD clamp device being a multi-channel NFET having a source terminal coupled to ground and a drain terminal coupled to a supply voltage, the ESD clamp device having an “on-state” impedance of less than 0.1 SI and configured to, in response to the gate terminal of the ESD clamp device being drawn to the bias voltage less than ground, allow a first leakage current to flow through the ESD clamp device, the ESD clamp device further configured to, in response to the gate terminal of the ESD clamp device being drawn to ground, allow a second leakage current to flow through the ESD clamp device, the first leakage current being less than the second leakage current; an inverter configured to, in response to receiving the PGOOD signal at an input of the inverter, drive an inverted copy of the PGOOD signal (PGOOD_N) to an enable input of a gated inverter; the gated inverter, the gated inverter including an output coupled to the gate terminal of the ESD clamp device, the gated inverter further including a second NFET, the second NFET having a source terminal connected to ground, the second NFET further having a drain terminal connected to a source terminal of a third NFET, and the second NFET further having a gate terminal connected to the enable input of the gated inverter, the second NFET configured to, in response to receiving the PGOOD_N signal, inhibit the output of the gated inverter from drawing the gate terminal of the ESD clamp device to ground; a resistor-capacitor (RC) circuit configured to generate, in response to a supply voltage node rising from ground to a specified supply voltage, a “voltage supply active” signal at an output of the RC circuit; and at least one pair of series-coupled inverters configured to couple the output of the RC circuit to an input of the gated inverter. |
