发明名称 |
SEMICONDUCTOR LASER ELEMENT AND NEAR-FIELD LIGHT OUTPUT DEVICE USING SAME |
摘要 |
A semiconductor laser element is provided with: a substrate formed of a semiconductor; a semiconductor laminated film, which is laminated on the substrate, and which includes an active layer; a first electrode and a second electrode, which are provided on surfaces parallel to the active layer on the side where the semiconductor laminated film is formed on the substrate; and a facet protection film that is provided on both the facets, which are perpendicular to the active layer, and which face each other. In the semiconductor laser element, the facet is used as a fixing surface for the semiconductor laser element, said facet having the facet protection film formed thereon. |
申请公布号 |
US2016322780(A1) |
申请公布日期 |
2016.11.03 |
申请号 |
US201415037552 |
申请日期 |
2014.08.27 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
TANI Kentaroh;KAWAKAMI Toshiyuki;ARIYOSHI Akira |
分类号 |
H01S5/028;H01S5/02;H01S5/22;H01S5/022 |
主分类号 |
H01S5/028 |
代理机构 |
|
代理人 |
|
主权项 |
1. A semiconductor laser element, comprising:
a substrate formed of a semiconductor; a semiconductor laminated film that is laid on the substrate and includes an active layer, a first electrode and a second electrode that are provided on a surface parallel to the active layer, at a side where the semiconductor laminated film is formed on the substrate; and a facet protection film that is provided on each of two facets which are located opposite to each other and which are both perpendicular to the active layer, wherein one of the facets on each of which the facet protection film is formed is used as a fixing surface of the semiconductor laser element. |
地址 |
Osaka-Shi, Osaka JP |