发明名称 Technique that Patterns Both Sides of a Thin Wafer to Fabricate Bi-Directional Devices
摘要 Methods and systems for fabricating bidirectional devices on both surfaces of a semiconductor wafer. Separation of the second handle wafer is accomplished by patterning a seal layer to form a grid before the second handle wafer is separated.
申请公布号 US2016322256(A1) 申请公布日期 2016.11.03
申请号 US201615055514 申请日期 2016.02.26
申请人 Ideal Power Inc. 发明人 Blanchard Richard A.;Alexander William C.
分类号 H01L21/78;H01L21/304;H01L21/683;H01L21/306 主分类号 H01L21/78
代理机构 代理人
主权项 1. A method of fabricating bidirectional semiconductor devices having patterned doped regions on both surfaces thereof, comprising the actions of: a) completing fabrication of patterned doped regions on one surface of a thin semiconductor device wafer which is already attached, at the other surface thereof, to a first handle wafer; b) forming a sacrificial layer over the patterned doped regions, and a seal layer over the sacrificial layer; c) patterning and etching the seal to thereby form grid; d) attaching a second handle wafer to the grid, and removing the first handle wafer from the device wafer; and e) sawing through the device wafer, in alignment to the grid, to thereby mechanically separate the device wafer from the second handle wafer.
地址 Austin TX US