发明名称 |
Technique that Patterns Both Sides of a Thin Wafer to Fabricate Bi-Directional Devices |
摘要 |
Methods and systems for fabricating bidirectional devices on both surfaces of a semiconductor wafer. Separation of the second handle wafer is accomplished by patterning a seal layer to form a grid before the second handle wafer is separated. |
申请公布号 |
US2016322256(A1) |
申请公布日期 |
2016.11.03 |
申请号 |
US201615055514 |
申请日期 |
2016.02.26 |
申请人 |
Ideal Power Inc. |
发明人 |
Blanchard Richard A.;Alexander William C. |
分类号 |
H01L21/78;H01L21/304;H01L21/683;H01L21/306 |
主分类号 |
H01L21/78 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method of fabricating bidirectional semiconductor devices having patterned doped regions on both surfaces thereof, comprising the actions of:
a) completing fabrication of patterned doped regions on one surface of a thin semiconductor device wafer which is already attached, at the other surface thereof, to a first handle wafer; b) forming a sacrificial layer over the patterned doped regions, and a seal layer over the sacrificial layer; c) patterning and etching the seal to thereby form grid; d) attaching a second handle wafer to the grid, and removing the first handle wafer from the device wafer; and e) sawing through the device wafer, in alignment to the grid, to thereby mechanically separate the device wafer from the second handle wafer. |
地址 |
Austin TX US |